Microstructure of thermally grown Si-layers

Ulf Södervall and Örjan Arthursson

Task:

To vary the growth parameters to obtain different kinds of crystallinity of thermally deposited thin layers of Silicon (poly and amorphous)

Short description of project:
There is a critical temperature (approx 600 C)  where the growth of silicon deposited layers will switch from amorphous to polycrystalline structure. We are interested in testing some different processing parameters to understand in more detail, how the growth temperature etc will influence the layer structure.

Processes:
Wafer cleaning (SC1 and SC2), wafer oxidation, CVD deposition of poly si and a-Si, ICP dry etch

Characterization:
TENCOR surface profilometer for stress measurements. AFM measurements for roughness, possibly XRD for crystallinity

Number of students:            2

Contact person: Ulf Södervall

Tel: +46 31 7723431
fax: +46 31 7728498
GSM: 070 3218178
Email: ulf.sodervall -et- mc2.chalmers.se