2006 2005 2004 2003 2002 2001 2000 1999 1998

 

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2006

222. "Organic molecular beam deposition system and initial studies of organic layer growth", M. Andreasson, L. Ilver, J. Kanski and T.G Andersson, Physica Scripta (2006)

 

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2005

221. "Substrate pre-treatment and initial growth: Strategies towards high-quality III-nitride growth on sapphire by molecular beam epitaxy", J.F. Fälth, S.K. Davidsson, X.Y. Liu and T.G. Andersson, Thin Solid Films (2005) 

220. "Annealing of c-plane sapphire for high-quality molecular beam epitaxy growth of III-nitrides", J.F. Fälth, S. K. Davidsson, X.Y. Liu, and T.G. Andersson (2005)

219. "Importance of ITO surface conditions for the interaction with thin CuPc layers" M. Andreasson, M. Tengelin-Nilsson, T.G. Andersson, L. Ilver and J. Kanski, Organic Electronics, 6(2005)175

218. "Influence of Al/N flux ratio during nucleation layer growth on the structural properties of AlN grown on sapphire by molecular beam epitaxy" J. F. Fälth, S. K. Davidsson, X. Y. Liu and T.G. Andersson, Appl- Phys Lett. 87(2005)161901

217. "Effect of AlN nucleation layer on the structural properties of bulk GaN grown on sapphire by molecular beam epitaxy", S. K. Davidsson, J. F. Fälth, X. Y. Liu, H. Zirath and T. G. Andersson, Journal of Applied Physics (2005)

216. "Subband transitions in AlxGa1-xN/GaN/AlxGa1-xN and AlxGa1-xN/InN/AlxGa1-xN single quantum wells", K. Premaratne, M. N. Gurusinghe and T. G. Andersson,

215. "Two-dimensional electron mobility limitation mechanisms in AlxGa1-xN/GaN heterostructures", M. N. Gurusinghe, S. K. Davidsson and T. G. Andersson, Phys. Rev. B (2005)

214. "Study of degradation mechanism of blue light emitting diodes", A. Uddin, A. C. Wei and T. G. Andersson, Thin solid Films (2005)

213. "Influence of dislocation density on photoluminescence intensity of GaN", J. F. Fälth, M.N. Gurusinghe, X. Y. Liu, T. G. Andersson, I.G.Ivanov, B. Monemar, H. H. You and S. C. Wang, Journal of Crystal Growth, 278 (2005) 406

212. "Structural and optical properties of GaN/AlN multiple quantum wells for intersubband applications", X. Y. Liu, F. Fälth and T. G. Andersson, P. Holmström, P. Jänes, U. Ekenberg and L. Thylén, Journal of Crystal Growth, 278 (2005) 397

211. "Interface study of AlN grown on Si substrate by radio frequency magnetron reactive sputtering", J. X. Zhang, Y.Z. Chen, H. Cheng, A. Uddin, Shu Yuan, K. Pita and  T. G. Andersson, Thin Solid Films, 471 (2005) 336

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2004 (Back to the top)

210. "Highly strained InGaAs ridge waveguide lasers fabraicated with pulsed anodic oxidation", Yi Qu, A. Uddin, C. Y. Liu, J. X. Zhang, T. G. Andersson, and S. M. Wang, Materials Processing for Properties and Performance (MP3), Ed. KA. Khor, RV. Ramanujan, CP. Ooi and J. Zhao, Institute of Materials East Asia,(2004) p. 499

209. "The role of defects in limiting the mobility in AlGaN/GaN heterostructures", T. G. Andersson, S. K. Davidsson, Y. Fu and M. N. Gurusinghe, Materials Processing for Properties and Performance (MP3), Ed. KA. Khor, RV. Ramanujan, CP. Ooi and J. Zhao, Institute of Materials East Asia,(2004) p. 481

208. "Inductively coupled plasma etching of GaN Mesa structures for micro-photoluminescence", T. Kawahara, F. Fälth, X. Y. Liu, T. G. Andersson, V. Desmaris, PP. Paskov and PO. Holtz, Materials Processing for Properties and Performance (MP3), Ed. KA. Khor, RV. Ramanujan, CP. Ooi and J. Zhao, Institute of Materials East Asia,(2004) p. 237

207. "Study of Alq3 thermal evaporation rate effects on the OLED", C. B. Lee, A. Uddin, X. Hu and T. G. Andersson, Materials Science & Engineering B, 112 (2004) 14

206. "The influence of composition and unintentional doping on the 2DEG density in AlGaN/GaN heterostructures", S. Davidsson, M. N. Gurusinghe, T. G. Andersson and H. Zirath, J. Electronic Materials, 33 (2004) 440

205. "Surface roughness of GaN and thin AlGaN layers grown by molecular beam epitaxy", X. Y. Liu and T. G. Andersson, Appl. Surf. Sci. 226 (2004) 331

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2003 (Back to the top)

204. "Arsenic incorporation and its influence on microstructure of wurtzite GaN grown by molecular beam epitaxy", Hyonju Kim, T. G. Andersson, J. -M. Chauveau, and A. Trampert, J. Appl. Phys. 94 (2003) 7193

203. "Mobility in epitaxial GaN: limitations of free electron concentration due to dislocations and compensation", M. N. Gurusinghe and T. G. Andersson, Phys. Rev. B 67 (2003) 235208

202. "Characterization of GaN/GaAs/GaN heterostructures grown by molecular beam epitaxy", Hyonju Kim, T. G. Andersson, J. -M. Chauveau, and A. Trampert, Solid State Electronics 47 (2003) 539

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2002 (Back to the top)

201. "Arsenic surface segregation during the molecular-beam epitaxial growth of GaAs embedded in wurtzite GaN", Hyonju Kim and T. G. Andersson, Appl. Phys. Lett., 80 (25), (2002) 4768.

200. "As-mediated stacking fault in wurtzite GaN epilayers", Hyonju Kim, T. G. Andersson,  J. -M. Chauveau, and A. Trampert Appl. Phys. Lett.81 (2002) 3407

199. "Initial growth of GaN on a-Al2O3 (0001) by molecular beam epitaxy", S. K. Davidsson, T. G. Andersson, and H. Zirath, Appl. Phys. Lett., 81 (4), (2002) 664.

198. "Microstructural characterisation of GaN-GaAs alloys grown on (001) GaAs by molecular beam epitaxy",H. Kim, T. G. Andersson, U. Södervall, C. Jäger, W. Jäger, M. Albrecht, G. Bösker and N. A. Stolwijk, MRS Proceedings 693 (2002) I3.32.

197. "Characterization and Composition of GaN grown by MBE and MOVPE", F. J. Fälth. H. J. Kim, A. Mattson, M. Heuken, and T. G. Andersson, Physica Scripta T101 (2002) 78


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2001 (back to the top)

196. "Characterization of AlxGa1-xN layers Grown by Molecular Beam Epitaxy", Hyonju Kim and T. G. Andersson, Physica B 308-310 (2001) 93-97.

195. "Unintentional Incorporation of B, As, and O Impurities in GaN", Hyonju Kim, F. J. Fälth, and T. G. Andersson, J. Electronic Materials, 30 (10) (2001) 1343.

194. "Limitations in MBE-grown GaN and AlGaN/GaN due to dislocations and lateral inhomogeneities", K. K. M. N. Gurusinghe, F. J. Fälth and T. G. Andersson, J. Cryst Growth 227- 228 (2001) 381.

193. "The formation of nitrogen damage during the growth of GaN on GaAs(001)", O. Zsebök, J.V. Thordson and T G Andersson, Jap. J. Appl. Phys. 40 (2001) 472.

192. "Morphology of InGaAs/GaAs Quantum Wires Prepared by Highly Controlled Deep Etching Techniques", O. Zsebök, J. V. Thordson, B Nilsson and T. G. Andersson, Nanotechnology, 12 (2001) 32.

191. "The effect of the first GaN monolayer on the nitridation damage of MBE-grown GaN on GaAs(001)", O Zsebök, J V Thordson, R Gunnarsson, L Ilver and T G Andersson, J Appl Phys. 89 (2001) 3662

190. "Effects of small amounts of Al in GaN on sapphire(0001) by molecular beam epitaxy", O Zsebök, J V Thordson, Q X Zhao and T G Andersson, J. Appl. Phys. 89 (2001) 1.

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2000 (back to the top)

189. "Characterisation of Surface Morphological Defects in MBE-grown GaN0.1As0.9 Layers on GaAs", O. Zsebök, J.V. Thordson, L. Ilver, U. Södervall and T.G. Andersson, Applied Surface Science, 166 (2000) 259.

188. "Direct observation of interface effects of thin AlAs(100) layers buried in GaAs", A. Agui, C. Såthe, J.-H. Guo, J. Nordgren, S. Mankefors, P.O. Nilsson, J. Kanski, T.G Andersson, K. Karlsson, Applied Surface Science, 166 (2000) 309.

187. "The Effect of Al in Plasma-assisted MBE-grown GaN", O Zsebök, J V Thordson, Q X Zhao, U Södervall, L Ilver and T G Andersson, MRS Internet J of Nitride Semiconductor research, 5S1 (2000) W3.36.1.

186. "Nanocrystals at MBE-Grown GaN/GaAs(001) Interfaces", O. Zsebök, J.V. Thordson, L. Ilver and T.G. Andersson, Applied Surface Science, 166 (2000) 317.

185. "Influence of N/Ga-flux ratio on Optical Properties and Surface Morphology of GaN Grown on Sapphire(0001) by MBE", O. Zsebök, J.V. Thordson, Q.X. Zhao and T.G. Andersson, Applied Surface Science, 166 (2000) 423.

184. "Current–voltage analysis of a tunneling emitter-undoped single quantum well infrared photodetector", K. K. M. N. Gurusinghe, K. Premaratne, T. G. Andersson and S. V. Bandara J. Appl. Phys. 87 (2000) 8575.

183. "Possible metallicity in SiO and GeO solids", S. Mankefors, T. Andersson, I. Panas, Chemical Physics Letters 322 (2000) 166.

182. "Theoretical investigation of the thickness dependence of soft-X-ray emission from thin AlAs(001) layers buried in GaAs", S. Mankefors, P. O. Nilsson, J. Kanski, T G Andersson, K Karlsson, A Agui, C Såthe, J-H Guo and J Nordgren, Phys. Rev. B61 (2000) 5540.

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1999 (Back to the top)

181. "Self-diffusionon the arsenic sublattice in GaAs investigated by the broadening of buried nitrogen doping layers", N A Stolwijk, G Bösker, J V Thordson, U Södervall and T G Andersson, Ch Jäger and W Jäger, Physica B 273-274 (1999) 685.

180. "The Effect of Al in Plasma-assisted MBE-grown GaN", O Zsebök, J V Thordson, Q X Zhao, U Södervall, L Ilver and T G Andersson, ,MRS Proceedings 595 (1999) W3.36.1.

179. "Surface Morphology and Compositional Variations in MBE Grown GaNxAs1-x Alloys", O. Zsebök, J. V. Thordson, L. Ilver and T. G. Andersson, Nanostructured Materials 12 (1999) 425.

178. "Resonant and Correlation Effects in the Tunnel Structures with Sequential 2D Electron Layers in a High Magnetic Field", Yu. V. Dubrovskii, E. E. Vdovin, Yu. N. Khanin, V G Popov, D K Maude, J-C Portal, J K Maan, K Wang, A Balandin, T G Andersson and S Wang, Physics of Low-Dimensional Systems 3/4 (1999) 181.

177. "Suppression of the Equilibrium Tunneling Current between Slightly Disordered Two- dimensional Electron Systems with Different Electron Concentrations in a High Magnetic Field", Yu. V. Dubrovskii, E. E. Vdovin, Yu. N. Khanin, V G Popov, D K Maude, J-C Portal, J K Maan, T G Andersson and S Wang, JETP Letters, 69 (1999) 255.

176. "Properties of Si d-Layers Embedded in GaAs", P.O. Holtz, B. Sernelius, G. Pozina, A.V. Buyanov, H.H. Radamson, L.D. Madsen, B. Monemar, J. Thordson, and T.G. Andersson, Physica Scripta T79 (1999) 99.

175. "Surface Reconstruction and Surface Morphology of GaN Grown by MBE on GaAs (001)", J. V. Thordson, O. Zsebök and T. G. Andersson, Physica Scripta T79 (1999) 198.

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 1998 (Back to the top)

174. "Arsenic Diffusion in Intrinsic Gallium Arsenide", G Bösker, N A Stolwijk, H Mehrer, U Södervall, J V Thordson, T G Andersson and A Burchard, MRS 1998 spring meeting, April 13- 17, San Fransisco, California, USA, (1998).

173. "Electron Tunneling between Two-dimensional Systems in Heterostructure with Single Doped Barrier", V G Popov, Yu. V. Dubrovskii, E. E. Vdovin, Yu. N. Khanin, D K Maude, J-C Portal, T G Andersson and J Thordson, Semiconductors, 32 (1998) 539.

172. "Tunneling Resonances in Structures with a Two-step Barrier", Yu. N. Khanin, E. E. Vdovin, Yu. V. Dubrovskii, K S Novoselov and T. G. Andersson, JETP Letters, 67 (1998) 863.

171. "Surface Morphology of MBE-Grown GaN on GaAs(001) as a Function of the N/Ga- Ratio", J. V. Thordson, O. Zsebök and T G Andersson, MRS Internet J. Nitride Semicond. Res., 3, 14 (1998).

170. "Si delta-Layers Embedded in GaAs", P.O. Holtz, B. Sernelius, A.V. Buyanov, G. Pozina, H.H. Radamson, L.D. Madsen, B. Monemar, J. V. Thordson and T.G. Andersson, Appl Phys Lett., 73 (1998) 3709

169. "Properties of Si d-layers Embedded in GaAs", P.O. Holtz, B. Sernelius, A.V. Buyanov, G. Pozina, L.D. Madsen, H.H. Radamson, J. Thordson, T.G. Andersson, J P McCaffrey and B. Monemar, Physica E Low dimensional Systems and Nanostructures, 2 (1998) 247.

168. "Diffusion of Nitrogen from a Buried Doping Layer in Gallium Arsenide Revealing the Prominent Role of As Interstitials", G Bösker, N A Stolwijk, J V Thordson, U Södervall and T G Andersson, Phys. Rev. Lett. 81 (1998) 3443.

167. "Properties of molecular-beam epitaxy-grown GaNAs from optical spectroscopy", G. Pozina, I. Ivanov, B. Monemar, J. V. Thordson and T. G. Andersson, J Appl Phys, 84 (1998) 3830.

166. "MBE-Growth and Characterisation of GaAs/Si/GaAs Heterostructures", T G Andersson and J V Thordson, Molecular Physics Reports 21 (1998) 35.

 

  
 
 
 

 
 

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